Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation

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dc.contributor.authorČech, Vladimírcs
dc.contributor.authorBránecký, Martincs
dc.coverage.issue7cs
dc.coverage.volume20cs
dc.date.issued2023-03-23cs
dc.description.abstractLower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.en
dc.formattextcs
dc.format.extent1-11cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationPlasma Processes and Polymers. 2023, vol. 20, issue 7, p. 1-11.en
dc.identifier.doi10.1002/ppap.202300019cs
dc.identifier.issn1612-8869cs
dc.identifier.orcid0000-0003-2105-1643cs
dc.identifier.other184061cs
dc.identifier.researcheridK-6564-2015cs
dc.identifier.scopus6701394460cs
dc.identifier.urihttp://hdl.handle.net/11012/244276
dc.language.isoencs
dc.publisherWileycs
dc.relation.ispartofPlasma Processes and Polymerscs
dc.relation.urihttps://onlinelibrary.wiley.com/doi/full/10.1002/ppap.202300019cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1612-8869/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectdegree of dissociationen
dc.subjectnonthermal plasmaen
dc.subjectorganosilicon precursorsen
dc.subjectplasma-enhanced chemical vapor deposition (PE-CVD)en
dc.subjectsticking coefficienten
dc.subjectthin filmsen
dc.titleSynthesis of thin-film materials using nonthermal plasma at a higher degree of dissociationen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-184061en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:38:28en
sync.item.modts2025.01.17 18:47:31en
thesis.grantorVysoké učení technické v Brně. Fakulta chemická. Ústav chemie materiálůcs
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