Synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation

Abstract

Lower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.Lower flow rates of precursor molecules are favorable for the synthesis of thin-film materials using nonthermal plasma at a higher degree of dissociation and sufficiently high deposition rate. These deposition conditions can be used for both continuous wave (CW) and pulsed plasmas and result in higher consumption of precursor molecules, which is beneficial for industrial applications due to cost reduction. A wider range of power can be used to control the chemical and physical properties of thin-film materials based on power-dependent plasma chemistry. Hydrogenated amorphous silicon carbide films deposited in CW and pulsed plasma are used as an example. The different kinetics of film growth and the role of self-bias voltage in both types of plasma are discussed.