Highly Integrated, Very High Gain 20Watt X-Band SSPA in GaN Technology

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dc.contributor.authorKant, Przemyslaw
dc.contributor.authorMichalski, Jerzy Julian
dc.coverage.issue1cs
dc.coverage.volume31cs
dc.date.accessioned2022-04-29T07:44:21Z
dc.date.available2022-04-29T07:44:21Z
dc.date.issued2022-04cs
dc.description.abstractThis paper shows design and development of a highly integrated solid state power amplifier (SSPA) operating in X-Band. The last amplifying stage is realized in GaN technology. For the first time in the high power amplifier, the vertical orientation of the last amplification stage was used, which allowed to significantly minimize the footprint of the device while maintaining high output power and PAE. The device includes full digital control over the entire RF chain using a custom BIAS ASIC controlled via SPI interface, assuring high flexibility and stability of the SSPA. The SSPA operates in a wide frequency range of 8.025 - 8.4 GHz with 20 Watt output power at input power range of -20 dBm to 0 dBm and power added efficiency (PAE) reaching up to 35 %. Although the main application of presented SSPA is earth observation (EO) it can be used in ground segment, e.g. for radar application as well.en
dc.formattextcs
dc.format.extent77-84cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2022 vol. 31, č. 1, s. 77-84. ISSN 1210-2512cs
dc.identifier.doi10.13164/re.2022.0077en
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/204135
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttps://www.radioeng.cz/fulltexts/2022/22_01_0077_0084.pdfcs
dc.rightsCreative Commons Attribution 4.0 International licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectMicrowave amplifieren
dc.subjectSolid State Power Amplifieren
dc.subjectSSPAen
dc.subjectGaN Technologyen
dc.titleHighly Integrated, Very High Gain 20Watt X-Band SSPA in GaN Technologyen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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