Atomic Layer Deposition of MoSe2 Using New Selenium Precursors

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dc.contributor.authorZazpe Mendioroz, Raúlcs
dc.contributor.authorCharvot, Jaroslavcs
dc.contributor.authorKrumpolec, Richardcs
dc.contributor.authorHromádko, Luděkcs
dc.contributor.authorPavliňák, Davidcs
dc.contributor.authorDvořák, Filipcs
dc.contributor.authorKnotek, Petrcs
dc.contributor.authorMichalička, Jancs
dc.contributor.authorPřikryl, Jancs
dc.contributor.authorNg, Siow Wooncs
dc.contributor.authorJelínková, Veronikacs
dc.contributor.authorBureš, Filipcs
dc.contributor.authorMacák, Jancs
dc.coverage.issue1cs
dc.coverage.volume21cs
dc.date.accessioned2020-08-04T11:03:17Z
dc.date.available2020-08-04T11:03:17Z
dc.date.issued2020-05-01cs
dc.description.abstractAmong the emerging 2D materials, transition metal chalcogenides are particularly encouraging as alternative semiconducting graphene-like nanomaterial. Recently, 2D MoSe2 has been gaining interest due to its intriguing properties, in many ways exceeding those of the extensively studied MoS2. The deposition of 2D nanomaterials in a conformal and uniform fashion on complex-shaped nanostructures is highly appealing but only achievable by atomic layer deposition (ALD). Unfortunately, the synthesis of MoSe2 by ALD is hindered by a current substantial lack of feasible Se precursors. In this work, we synthesized a set of alkysilyl (R3Si)2Se and alkylstannyl (R3Sn)2Se compounds and studied their suitability as Se ALD precursors. Thus, ALD processes carried out using MoCl5 as Mo precursor counterpart were followed by an extensive characterization of the as deposited material. The corresponding results revealed successful deposition of MoSe2 nanostructures on substrates of different nature with dominant out-of-plane orientation. Eventually, the growth evolution of the MoSe2 during the very early ALD stage was studied and described, displaying concomitant in-plane and out-of-plane MoSe2 growth. All in all, a set of suitable Se precursors presented herein paves the way for the deposition of 2D MoSe2 with all the own ALD benefits and allow the further study of its promising properties in a wide number of applications.en
dc.formattextcs
dc.format.extent1-10cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationFlatChem. 2020, vol. 21, issue 1, p. 1-10.en
dc.identifier.doi10.1016/j.flatc.2020.100166cs
dc.identifier.issn2452-2627cs
dc.identifier.other164019cs
dc.identifier.urihttp://hdl.handle.net/11012/193505
dc.language.isoencs
dc.publisherElseviercs
dc.relation.ispartofFlatChemcs
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S2452262720300155cs
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2452-2627/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/cs
dc.subject2D materialsen
dc.subjectAtomic layer depositionen
dc.subjectChalcogensen
dc.subjectLayered compoundsen
dc.subjectSynthesis designen
dc.titleAtomic Layer Deposition of MoSe2 Using New Selenium Precursorsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-164019en
sync.item.dbtypeVAVen
sync.item.insts2021.09.11 16:56:42en
sync.item.modts2021.09.11 16:14:48en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Sdílená laboratoř RP1cs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Pokročilé nízkodimenzionální nanomateriálycs
thesis.grantorVysoké učení technické v Brně. Fakulta strojního inženýrství. Ústav materiálových věd a inženýrstvícs
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Ústav materiálových věd a inženýrství
Pokročilé nízkodimenzionální nanomateriály
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