Inductance Simulators and Their Application to the 4th Order Elliptic Lowpass Ladder Filter Using CMOS VD-DIBAs

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dc.contributor.authorJaikla, Winaics
dc.contributor.authorBunrueangsak, Sirigulcs
dc.contributor.authorKhateb, Fabiancs
dc.contributor.authorKulej, Tomaszcs
dc.contributor.authorSuwanjan, Peerawutcs
dc.contributor.authorSupavarasuwat, Piyacs
dc.coverage.issue6, IF: 2,412cs
dc.coverage.volume10cs
dc.date.issued2021-04-17cs
dc.description.abstractThis paper presents inductance simulators using the voltage differencing differential input buffered amplifier (VD-DIBA) as an active building block. Three types of inductance simulators, including floating lossless inductance, series inductance-resistance, and parallel inductance-resistance simulators, are proposed, in addition to their application to the 4th order elliptic lowpass ladder filter. The simple design procedures of these inductance simulators using a circuit block diagram are also given. The proposed inductance simulators employ two VD-DIBAs and two passive elements. The complementary metal oxide semiconductor (CMOS) VD-DIBA used in this design utilizes the multiple-input metal oxide semiconductor (MOS) transistor technique in order to achieve a compact and simple structure with a minimum count of transistors. Thanks to this technique, the VD-DIBA offers high performances compared to the other CMOS structures presented in the literature. The CMOS VD-DIBAs and their applications are designed and simulated in the Cadence environment using a 0.18 mu m CMOS process from Taiwan semiconductor manufacturing company (TSMC). Using a supply voltage of +/- 0.9 V, the linear operation of VD-DIBA is obtained over a differential input range of -0.5 V to 0.5 V. The lowpass (LP) ladder filter realized with the proposed inductance simulators shows a dynamic range (DR) of 80 dB for a total harmonic distortion (THD) of 2% at 1 kHz and a 1.8 V peak-to-peak output. In addition, the experimental results of the floating inductance simulators and their applications are obtained by using VD-DIBA constructed from the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental ones, confirming the advantages of the inductance simulators and their application.en
dc.formattextcs
dc.format.extent1-30cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationElectronics (MDPI). 2021, vol. 10, issue 6, IF: 2,412, p. 1-30.en
dc.identifier.doi10.3390/electronics10060684cs
dc.identifier.issn2079-9292cs
dc.identifier.orcid0000-0002-9864-9830cs
dc.identifier.other171226cs
dc.identifier.researcheridO-6465-2014cs
dc.identifier.scopus36185268100cs
dc.identifier.urihttp://hdl.handle.net/11012/196514
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofElectronics (MDPI)cs
dc.relation.urihttps://www.mdpi.com/2079-9292/10/6/684cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2079-9292/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectinductance simulatoren
dc.subjectmultiple-input techniqueen
dc.subjectoperational transconductance amplifieren
dc.subjectvoltage differencing differential input buffered amplifieren
dc.titleInductance Simulators and Their Application to the 4th Order Elliptic Lowpass Ladder Filter Using CMOS VD-DIBAsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-171226en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:41:01en
sync.item.modts2025.01.17 18:43:00en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav mikroelektronikycs
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