Tunable Balun Low-Noise Amplifier in 65nm CMOS Technology

dc.contributor.authorSturm, Johannes
dc.contributor.authorGroinig, Marcus
dc.contributor.authorXiang, Xinbo
dc.coverage.issue1cs
dc.coverage.volume23cs
dc.date.accessioned2014-12-09T11:53:37Z
dc.date.available2014-12-09T11:53:37Z
dc.date.issued2014-04cs
dc.description.abstractThe presented paper includes the design and implementation of a 65 nm CMOS low-noise amplifier (LNA) based on inductive source degeneration. The amplifier is realized with an active balun enabling a single-ended input which is an important requirement for low-cost system on chip implementations. The LNA has a tunable bandpass characteristics from 4.7 GHz up to 5.6 GHz and a continuously tunable gain from 22 dB down to 0 dB, which enables the required flexibility for multi-standard, multi-band receiver architectures. The gain and band tuning is realized with an optimized tunable active resistor in parallel to a tunable L-C tank amplifier load. The amplifier achieves an IIP3 linearity of -8dBm and a noise figure of 2.7 dB at the highest gain and frequency setting with a low power consumption of 10 mW. The high flexibility of the proposed LNA structure together with the overall good performance makes it well suited for future multi-standard low-cost receiver front-ends.en
dc.formattextcs
dc.format.extent319-327cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2014, vol. 23, č. 1, s. 319-327. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/36423
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2014/14_01_0319_0327.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectLow-noise amplifieren
dc.subjectLNAen
dc.subjectvariable gainen
dc.subjecttunable banden
dc.subjectmulti-standard receiveren
dc.titleTunable Balun Low-Noise Amplifier in 65nm CMOS Technologyen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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