An Overview of Fully On-Chip Inductors

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dc.contributor.authorOndica, R.
dc.contributor.authorKovac, M.
dc.contributor.authorHudec, A.
dc.contributor.authorRavasz, R.
dc.contributor.authorMaljar, D.
dc.contributor.authorStopjakova, V.
dc.contributor.authorArbet, D.
dc.coverage.issue1cs
dc.coverage.volume32cs
dc.date.accessioned2023-10-11T07:07:10Z
dc.date.available2023-10-11T07:07:10Z
dc.date.issued2023-04cs
dc.description.abstractThis paper focuses on full integration of passive devices, especially inductors with emphasis on multi-layer stacked (MLS) structures of fully integrated inductors using patterned ground shield (PGS) and fully integrated capacitor. Comparison of different structures is focused on the main electrical parameters of integrated inductors (e.g. inductance L, inductance density LA, quality factor Q, frequency of maximum quality factor F Qmax, self-resonant frequency FSR, and series resistance R DC ) and other non-electrical parameters (e.g. required area, manufacturing process, purpose, etc.) that are equally important during comparison of the structures. Categorization of inductor structures with most significant results that was reported in the last years is proposed according to manufacturing process. Final geometrical and electrical properties of the structure in great manner accounts to the fabrication process of integrated passive device. This work offers an overview and state-of-the-art of the integrated inductors as well as manufacturing processes used for their fabrication. Second purpose of this paper is insertion of the proposed structure from our previous work among the other results reported in the last 7 years. With the proposed solution, one can obtain the highest inductance density L A = 23.59 nH/mm 2 and second highest quality factor Q = 10.09 amongst similar solutions reported in standard technologies that is also suitable competition for integrated inductors manufactured in advanced technology nodes.en
dc.formattextcs
dc.format.extent11-22cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2023 vol. 32, č. 1, s. 11-22. ISSN 1210-2512cs
dc.identifier.doi10.13164/re.2023.0011en
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/214309
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttps://www.radioeng.cz/fulltexts/2023/23_01_0011_0022.pdfcs
dc.rightsCreative Commons Attribution 4.0 International licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectFully Integrated Inductoren
dc.subjectFully Integrated Capacitoren
dc.subjectIntegrated Passive Deviceen
dc.subjectSilicon Embedded Inductoren
dc.subjectAir Core Inductoren
dc.subjectMagnetic Core Inductoren
dc.titleAn Overview of Fully On-Chip Inductorsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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