Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump

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dc.contributor.authorMarek, Jan
dc.contributor.authorHospodka, Jiri
dc.contributor.authorSubrt, Ondrej
dc.coverage.issue3cs
dc.coverage.volume26cs
dc.date.accessioned2017-09-15T08:41:55Z
dc.date.available2017-09-15T08:41:55Z
dc.date.issued2017-09cs
dc.description.abstractThis paper presents a symbolic description of the design process of the switch transistors for the cross- coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator software which can be an extremely time-consuming process in contrast to described analytical procedure. The significant part of the pumping losses is caused by the reverse current through the switch transistors due to continuous-time voltage change on the main capacitors. Design process is based on the analytical expression of the time response characteristics of the pump stage as an analog system with using BSIM model equations. The main benefit of the article is the analytical transistors sizing formula, so that the maximum voltage gain is achieved. The diode transistor is dimensioned for the pump requirements, as the maximal pump output ripple voltage, current, etc. The characteristics of the proposed circuit has been verified by simulation in ELDO Spice. Results are valid for N-stage charge pump and also applicable for other model equations as PSP, EKV.en
dc.formattextcs
dc.format.extent781-790cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2017 vol. 26, č. 3, s. 781-790. ISSN 1210-2512cs
dc.identifier.doi10.13164/re.2017.0781en
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/69977
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttps://www.radioeng.cz/fulltexts/2017/17_03_0781_0790.pdfcs
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectTime response characteristicsen
dc.subjectreverse currenten
dc.subjectcross-coupled charge pumpen
dc.subjectBSIM modelen
dc.subjecthigh-voltageen
dc.titleGuidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pumpen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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