Modeling of Microwave Semiconductor Diodes

Thumbnail Image
Files
08_03_047_052.pdf(337.1 KB)
Date
2008-09
Authors
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.
Description
Keywords
Gunn effect, carrier injection effect, PIN, FEM, COMSOL Multiphysics, drift-diffusion scheme, multi-physical model
Citation
Radioengineering. 2008, vol. 17, č. 3, s. 47-52. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2008/08_03_047_052.pdf
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en
Study field
Comittee
Date of acceptance
Defence
Result of defence
Document licence
Creative Commons Attribution 3.0 Unported License
http://creativecommons.org/licenses/by/3.0/
DOI
URI
http://hdl.handle.net/11012/57213
Collections
2008/3
Citace PRO