Synthesis of titanium phosphide by thermal ALD based on a novel phosphorus precursor

dc.contributor.authorZazpe Mendioroz, Raúlcs
dc.contributor.authorCharvot, Jaroslavcs
dc.contributor.authorRodriguez Pereira, Jhonatancs
dc.contributor.authorHromádko, Luděkcs
dc.contributor.authorKurka, Michalcs
dc.contributor.authorBaishya, Kaushikcs
dc.contributor.authorSopha, Hanna Ingridcs
dc.contributor.authorBureš, Filipcs
dc.contributor.authorMacák, Jancs
dc.coverage.issue19cs
dc.coverage.volume17cs
dc.date.issued2025-05-15cs
dc.description.abstractHerein, we present for the first time the synthesis of titanium phosphide (TixPy) by thermal ALD based on the use of in-house synthesized Tris(trimethyltin)phosphide (TMT3P) combined with titanium tetrachloride (TiCl4) as the P- and Ti-precursor, respectively. The deposition process demonstrated followed ALD principles and revealed an ALD window between 175 degrees C and 225 degrees C. The TixPy thin films grown on substrates of different nature were characterized by several techniques, showing granular surfaces and electrical resistivities of the order of hundreds of Ohms. The effects of different ALD parameters such as deposition temperature, dosing time of both precursors, and the type of substrate on the chemical composition were extensively assessed by X-ray photoelectron spectroscopy (XPS). Interestingly, the results yielded the deposition of P-rich titanium phosphide and showed that its chemical composition depends on the deposition temperature and the type of substrate. Based on XPS results, a tentative description of the TixPy growth as a function of the number of ALD cycles was provided.en
dc.description.abstractHerein, we present for the first time the synthesis of titanium phosphide (TixPy) by thermal ALD based on the use of in-house synthesized Tris(trimethyltin)phosphide (TMT3P) combined with titanium tetrachloride (TiCl4) as the P- and Ti-precursor, respectively. The deposition process demonstrated followed ALD principles and revealed an ALD window between 175 degrees C and 225 degrees C. The TixPy thin films grown on substrates of different nature were characterized by several techniques, showing granular surfaces and electrical resistivities of the order of hundreds of Ohms. The effects of different ALD parameters such as deposition temperature, dosing time of both precursors, and the type of substrate on the chemical composition were extensively assessed by X-ray photoelectron spectroscopy (XPS). Interestingly, the results yielded the deposition of P-rich titanium phosphide and showed that its chemical composition depends on the deposition temperature and the type of substrate. Based on XPS results, a tentative description of the TixPy growth as a function of the number of ALD cycles was provided.en
dc.formattextcs
dc.format.extent12406-12415cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationNanoscale. 2025, vol. 17, issue 19, p. 12406-12415.en
dc.identifier.doi10.1039/d5nr00457hcs
dc.identifier.issn2040-3364cs
dc.identifier.orcid0000-0001-6910-8560cs
dc.identifier.orcid0000-0001-7091-3022cs
dc.identifier.other198247cs
dc.identifier.scopus55655855500cs
dc.identifier.urihttp://hdl.handle.net/11012/255194
dc.language.isoencs
dc.publisherROYAL SOC CHEMISTRYcs
dc.relation.ispartofNanoscalecs
dc.relation.urihttps://pubs.rsc.org/en/content/articlelanding/2025/nr/d5nr00457hcs
dc.rightsCreative Commons Attribution-NonCommercial 3.0 Unportedcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2040-3364/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/cs
dc.subjectATOMIC LAYER DEPOSITIONen
dc.subjectCHEMICAL-VAPOR-DEPOSITIONen
dc.subjectTHIN-FILMSen
dc.subjectGROWTHen
dc.subjectATOMIC LAYER DEPOSITION
dc.subjectCHEMICAL-VAPOR-DEPOSITION
dc.subjectTHIN-FILMS
dc.subjectGROWTH
dc.titleSynthesis of titanium phosphide by thermal ALD based on a novel phosphorus precursoren
dc.title.alternativeSynthesis of titanium phosphide by thermal ALD based on a novel phosphorus precursoren
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-198247en
sync.item.dbtypeVAVen
sync.item.insts2025.10.14 15:19:09en
sync.item.modts2025.10.14 10:37:10en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Pokročilé nízkodimenzionální nanomateriálycs

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