Transparent and conductive titanium nitride thin films for implantable bioelectronics deposited at low temperature using two Kaufman ion-beam sources
but.event.date | 26.04.2022 | cs |
but.event.title | STUDENT EEICT 2022 | cs |
dc.contributor.author | Jarušek, J. | |
dc.contributor.author | Gablech, I. | |
dc.date.accessioned | 2023-04-25T10:17:06Z | |
dc.date.available | 2023-04-25T10:17:06Z | |
dc.date.issued | 2022 | cs |
dc.description.abstract | This work proposes ultra-thin films of titanium nitride as a material for the realization of transparent and conductive layers suitable for implantable bioelectronics. Results further show that good results of crystallography, transmittance, and sheet resistance can be achieved for thin films with thicknesses of 15 nm and 20 nm deposited at the beam energy of the primary ion source of 400 eV and temperature below 100 °C. | en |
dc.format | text | cs |
dc.format.extent | 84-87 | cs |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Proceedings I of the 28st Conference STUDENT EEICT 2022: General papers. s. 84-87. ISBN 978-80-214-6029-4 | cs |
dc.identifier.isbn | 978-80-214-6029-4 | |
dc.identifier.uri | http://hdl.handle.net/11012/209297 | |
dc.language.iso | en | cs |
dc.publisher | Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií | cs |
dc.relation.ispartof | Proceedings I of the 28st Conference STUDENT EEICT 2022: General papers | en |
dc.relation.uri | https://conf.feec.vutbr.cz/eeict/index/pages/view/ke_stazeni | cs |
dc.rights | © Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií | cs |
dc.rights.access | openAccess | en |
dc.subject | titanium nitride | en |
dc.subject | transparent conducting film | en |
dc.subject | sputtering | en |
dc.subject | bioelectronics implants | en |
dc.subject | thin films | en |
dc.subject | visible transmittance | en |
dc.title | Transparent and conductive titanium nitride thin films for implantable bioelectronics deposited at low temperature using two Kaufman ion-beam sources | en |
dc.type.driver | conferenceObject | en |
dc.type.status | Peer-reviewed | en |
dc.type.version | publishedVersion | en |
eprints.affiliatedInstitution.department | Fakulta elektrotechniky a komunikačních technologií | cs |
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