Transparent and conductive titanium nitride thin films for implantable bioelectronics deposited at low temperature using two Kaufman ion-beam sources

Abstract

This work proposes ultra-thin films of titanium nitride as a material for the realization of transparent and conductive layers suitable for implantable bioelectronics. Results further show that good results of crystallography, transmittance, and sheet resistance can be achieved for thin films with thicknesses of 15 nm and 20 nm deposited at the beam energy of the primary ion source of 400 eV and temperature below 100 °C.