Analytical Computation of the Area of Pinched Hysteresis Loops of Ideal Mem-Elements
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Date
2013-04
Authors
Biolek, Zdenek
Biolek, Dalibor
Biolkova, Viera
ORCID
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Společnost pro radioelektronické inženýrství
Abstract
The memory elements, memristor being the best known of them, driven by a periodical waveform exhibit the well-known pinched hysteresis loops. The hysteresis is caused by a memory effect which results in a nonzero area closed within the loop. This paper presents an analytical formula for the loop area. This formula is then applied to memory elements whose parameter-vs.-state maps are modeled in the polynomial form. The TiO2 memristor, a special subset of the above elements, is analyzed as a demonstration example.
Description
Citation
Radioengineering. 2013, vol. 22, č. 1, s. 132-135. ISSN 1210-2512
http://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf
http://www.radioeng.cz/fulltexts/2013/13_01_0132_0135.pdf
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en