Current Fluctuations of Reverse-Biased Solar
Loading...
Date
Authors
Škvarenina, Ľ.
Advisor
Referee
Mark
Journal Title
Journal ISSN
Volume Title
Publisher
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
ORCID
Abstract
This paper presents mainly noise diagnostics of pn junctions local defects in a singlecrystalline silicon solar cells structure. Research consists of a non-destructive measurement methodology of reverse-biased junction in solar cells. Diagnostics of defect areas in this documents are based especially on measurement of noise power spectral density, measurement of the radiation emitted from defects in visible range and I-V characteristic measurement.
Description
Keywords
Citation
Proceedings of the 21st Conference STUDENT EEICT 2015. s. 546-550. ISBN 978-80-214-5148-3
http://www.feec.vutbr.cz/EEICT/
http://www.feec.vutbr.cz/EEICT/
Document type
Peer-reviewed
Document version
Published version
Date of access to the full text
Language of document
en
