Transmission Line on Semiconductor Substrate with Distributed Amplification

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dc.contributor.authorPokorny, Michal
dc.contributor.authorRaida, Zbynek
dc.coverage.issue2cs
dc.coverage.volume19cs
dc.date.accessioned2016-03-11T09:18:24Z
dc.date.available2016-03-11T09:18:24Z
dc.date.issued2010-06cs
dc.description.abstractIn order to compensate losses in metal strips, an active microstrip line on a semiconductor substrate is proposed, and its finite element model is presented. The active medium is provided by A3B5 semiconductor in highintensity electric field. The simple model of the active media is developed and used for calculation of the propagation properties of the fundamental mode and for the thermal analysis of the device. The problem of system self-oscillation is discussed and empirical stability criteria are introduced. A proper heat-sink is proposed to provide the operation in a continuous regime.en
dc.formattextcs
dc.format.extent307-312cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRadioengineering. 2010, vol. 19, č. 2, s. 307-312. ISSN 1210-2512cs
dc.identifier.issn1210-2512
dc.identifier.urihttp://hdl.handle.net/11012/56997
dc.language.isoencs
dc.publisherSpolečnost pro radioelektronické inženýrstvícs
dc.relation.ispartofRadioengineeringcs
dc.relation.urihttp://www.radioeng.cz/fulltexts/2010/10_02_307_312.pdfcs
dc.rightsCreative Commons Attribution 3.0 Unported Licenseen
dc.rights.accessopenAccessen
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/en
dc.subjectGaAsen
dc.subjectactiveen
dc.subjectmictrostripen
dc.subjectmillimeter-waveen
dc.subjectGunn’s effecten
dc.subjectthermalen
dc.subjectCOMSOLen
dc.titleTransmission Line on Semiconductor Substrate with Distributed Amplificationen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.facultyFakulta eletrotechniky a komunikačních technologiícs
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