Present State Of GaN Technology In Power Electronics
| but.event.date | 27.04.2017 | cs |
| but.event.title | Student EEICT 2017 | cs |
| dc.contributor.author | Šír, Michal | |
| dc.date.accessioned | 2020-05-07T09:40:32Z | |
| dc.date.available | 2020-05-07T09:40:32Z | |
| dc.date.issued | 2017 | cs |
| dc.description.abstract | This paper presents a general overview of nowadays Gallium Nitride power transistor technology and shows the existing components with their limits from different manufacturers currently available on the market. Introduction to GaN depletion mode, enhancement mode and cascode transistor structure with their function explanation is included. | en |
| dc.format | text | cs |
| dc.format.extent | 563-567 | cs |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.citation | Proceedings of the 23st Conference STUDENT EEICT 2017. s. 563-567. ISBN 978-80-214-5496-5 | cs |
| dc.identifier.isbn | 978-80-214-5496-5 | |
| dc.identifier.uri | http://hdl.handle.net/11012/187166 | |
| dc.language.iso | en | cs |
| dc.publisher | Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií | cs |
| dc.relation.ispartof | Proceedings of the 23st Conference STUDENT EEICT 2017 | en |
| dc.relation.uri | http://www.feec.vutbr.cz/EEICT/ | cs |
| dc.rights | © Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií | cs |
| dc.rights.access | openAccess | en |
| dc.subject | GaN | en |
| dc.subject | cascode | en |
| dc.subject | depletion mode | en |
| dc.subject | enhancement mode | en |
| dc.title | Present State Of GaN Technology In Power Electronics | en |
| dc.type.driver | conferenceObject | en |
| dc.type.status | Peer-reviewed | en |
| dc.type.version | publishedVersion | en |
| eprints.affiliatedInstitution.department | Fakulta elektrotechniky a komunikačních technologií | cs |
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