Present State Of GaN Technology In Power Electronics
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Date
Authors
Šír, Michal
Advisor
Referee
Mark
Journal Title
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Volume Title
Publisher
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
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Abstract
This paper presents a general overview of nowadays Gallium Nitride power transistor technology and shows the existing components with their limits from different manufacturers currently available on the market. Introduction to GaN depletion mode, enhancement mode and cascode transistor structure with their function explanation is included.
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Citation
Proceedings of the 23st Conference STUDENT EEICT 2017. s. 563-567. ISBN 978-80-214-5496-5
http://www.feec.vutbr.cz/EEICT/
http://www.feec.vutbr.cz/EEICT/
Document type
Peer-reviewed
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en