Low-energy electron microscopy of graphene outside UHV: electron-induced removal of PMMA residues used for graphene transfer

dc.contributor.authorMaterna Mikmeková, Eliškacs
dc.contributor.authorMüllerová, Ilonacs
dc.contributor.authorFrank, Luděkcs
dc.contributor.authorPolčák, Josefcs
dc.contributor.authorSluyterman, Seynocs
dc.contributor.authorLejeune, Michaëlcs
dc.contributor.authorKonvalina, Ivocs
dc.coverage.issue1cs
dc.coverage.volume241cs
dc.date.issued2020-05-01cs
dc.description.abstractTwo-dimensional materials, such as graphene, are usually prepared by chemical vapor deposition (CVD) on selected substrates, and their transfer is completed with a supporting layer, mostly polymethyl methacrylate (PMMA). Indeed, the PMMA has to be removed precisely to obtain the predicted superior properties of graphene after the transfer process. We demonstrate a new and effective technique to achieve a polymer-free CVD graphene - by utilizing low-energy electron irradiation in a scanning low-energy electron microscope (SLEEM). The influence of electron-landing energy on cleaning efficiency and graphene quality was observed by SLEEM, Raman spectroscopy (the presence of disorder D peak) and XPS (the deconvolution of the C 1s peak). After removing the absorbed molecules and polymer residues from the graphene surface with slow electrons, the individual graphene layers can also be distinguished outside ultra-high vacuum conditions in both the reflected and transmitted modes of a scanning low-energy (transmission) electron microscope.en
dc.description.abstractTwo-dimensional materials, such as graphene, are usually prepared by chemical vapor deposition (CVD) on selected substrates, and their transfer is completed with a supporting layer, mostly polymethyl methacrylate (PMMA). Indeed, the PMMA has to be removed precisely to obtain the predicted superior properties of graphene after the transfer process. We demonstrate a new and effective technique to achieve a polymer-free CVD graphene - by utilizing low-energy electron irradiation in a scanning low-energy electron microscope (SLEEM). The influence of electron-landing energy on cleaning efficiency and graphene quality was observed by SLEEM, Raman spectroscopy (the presence of disorder D peak) and XPS (the deconvolution of the C 1s peak). After removing the absorbed molecules and polymer residues from the graphene surface with slow electrons, the individual graphene layers can also be distinguished outside ultra-high vacuum conditions in both the reflected and transmitted modes of a scanning low-energy (transmission) electron microscope.en
dc.formattextcs
dc.format.extent1-7cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. 2020, vol. 241, issue 1, p. 1-7.en
dc.identifier.doi10.1016/j.elspec.2019.06.005cs
dc.identifier.issn0368-2048cs
dc.identifier.orcid0000-0002-6571-6291cs
dc.identifier.other167372cs
dc.identifier.researcheridD-8130-2012cs
dc.identifier.scopus25632811000cs
dc.identifier.urihttp://hdl.handle.net/11012/195816
dc.language.isoencs
dc.publisherElseviercs
dc.relation.ispartofJOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENAcs
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S0368204818302068cs
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/0368-2048/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/cs
dc.subjectGrapheneen
dc.subjectPMMAen
dc.subjectSlow electron treatmenten
dc.subjectXPSen
dc.subjectRaman spectroscopyen
dc.subjectGraphene
dc.subjectPMMA
dc.subjectSlow electron treatment
dc.subjectXPS
dc.subjectRaman spectroscopy
dc.titleLow-energy electron microscopy of graphene outside UHV: electron-induced removal of PMMA residues used for graphene transferen
dc.title.alternativeLow-energy electron microscopy of graphene outside UHV: electron-induced removal of PMMA residues used for graphene transferen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionacceptedVersionen
sync.item.dbidVAV-167372en
sync.item.dbtypeVAVen
sync.item.insts2025.10.14 15:05:55en
sync.item.modts2025.10.14 09:36:24en
thesis.grantorVysoké učení technické v Brně. Fakulta strojního inženýrství. Ústav fyzikálního inženýrstvícs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Příprava a charakterizace nanostrukturcs

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