Evidence of strange attractors in class C amplifier with single bipolar transistor: polynomial and piecewise-linear case

Abstract

This paper presents and briefly discusses recent observations of dynamics associated with isolated generalized bipolar transistor cells. A mathematical model of this simple system is considered on the highest level of abstraction such that it comprises many different network topologies. The key property of the analyzed structure is its bias point since the transistor is modeled via two-port admittance parameters. A necessary but not sufficient condition for the evolution of autonomous complex behavior is the nonlinear bilateral nature of the transistor with arbitrary reason that causes this effect. It is proved both by numerical analysis and experimental measurement that chaotic motion is miscellaneous, robust, and it is neither numerical artifact nor long transient motion.

This paper presents and briefly discusses recent observations of dynamics associated with isolated generalized bipolar transistor cells. A mathematical model of this simple system is considered on the highest level of abstraction such that it comprises many different network topologies. The key property of the analyzed structure is its bias point since the transistor is modeled via two-port admittance parameters. A necessary but not sufficient condition for the evolution of autonomous complex behavior is the nonlinear bilateral nature of the transistor with arbitrary reason that causes this effect. It is proved both by numerical analysis and experimental measurement that chaotic motion is miscellaneous, robust, and it is neither numerical artifact nor long transient motion.