Scanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxy

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dc.contributor.authorSobola, Dinaracs
dc.contributor.authorKorostylev, Evgenijcs
dc.contributor.authorBilalov, Bilalcs
dc.contributor.authorTománek, Pavelcs
dc.coverage.issue1cs
dc.coverage.volume48cs
dc.date.issued2013-05-03cs
dc.description.abstractThe objective of the study is a growth of SiC/(SiC)1-x(AlN)x structures by fast sublimation epitaxy of the polycrystalline source of (SiC)1-x(AlN)x and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes). The result of analysis shows that increasing of the growth temperature up to 2300 K llows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.en
dc.description.abstractCílem studie je růst struktur SiC/(SiC)1-x(AlN)x pomocí rychlé sublimační epitaxe polykrystalického zdroje (SiC)1-x(AlN)x a jejich charakterizace pomocí SEM a AFM. K dosažrení tohoto cíle bylo třeba stanovit optimální podmínky. Vyrobené struktury by mohly být použity jako polovodiče s širokým zakázaným pásem. Výsledky analýzy ukazují, že v důeeldku zvyšování teploty až do 2300 K The result of analysis shows that increasing of the growth temperature up to 2300 K umožní provést sublimační epitaxi tenkých vrstev AlN a jeho tuhého roztoku.cs
dc.formattextcs
dc.format.extent1-4cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationEPJ Web of Conferences. 2013, vol. 48, issue 1, p. 1-4.en
dc.identifier.doi10.1051/epjconf/20134800002cs
dc.identifier.issn2100-014Xcs
dc.identifier.orcid0000-0002-0008-5265cs
dc.identifier.other99853cs
dc.identifier.researcheridG-1175-2019cs
dc.identifier.scopus57189064262cs
dc.identifier.urihttp://hdl.handle.net/11012/193660
dc.language.isoencs
dc.publisherEDP Sciencescs
dc.relation.ispartofEPJ Web of Conferencescs
dc.relation.urihttps://www.epj-conferences.org/articles/epjconf/abs/2013/09/epjconf_OAM2012_00002/epjconf_OAM2012_00002.htmlcs
dc.rightsCreative Commons Attribution 2.0 Genericcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2100-014X/cs
dc.rights.urihttp://creativecommons.org/licenses/by/2.0/cs
dc.subjectCdSen
dc.subjectAlNen
dc.subjectthin layeren
dc.subjectproximal microscopyen
dc.subjectCdS
dc.subjectAlN
dc.subjecttenká vrstva
dc.subjectsondový mikroskop
dc.titleScanning proximal microscopy study of the thin layers of silicon carbide aluminum nitride solid solution manufactured by fast sublimation epitaxyen
dc.title.alternativePoužitá sondového rastrovacího mikroskopu pro studium tenkých vrstev karbidu křemíku a nitridu hliníku vyrobených rychlou sublimační epitaxícs
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-99853en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:40:24en
sync.item.modts2025.01.17 18:41:13en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav fyzikycs
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