Publication: Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy
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Faculty of Electrical Engineering and Information Technology of the Slovak University of Technology
0000-0002-8604-7162 Altmetrics
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The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.
The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.
The paper reports on a non-destructive method of reliability prediction for semiconductor lasers diodes GaSb based VCSE. Transport and noise characteristic of forward biased were measured in order to evaluate the new MBE technology.
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Journal of Electrical Engineering-Elektrotechnicky Casopis. 2015, vol. 66, issue 4, p. 226-230.
https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml
https://content.sciendo.com/view/journals/jee/66/4/article-p226.xml
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en
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Except where otherwised noted, this item's license is described as Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 Unported