Nature of electrically detected magnetic resonance in highly nitrogen-doped 6<i>H</i>-SiC single crystals

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dc.contributor.authorHoliatkin, Marynacs
dc.contributor.authorSolodovnyk, Arturcs
dc.contributor.authorLaguta, Oleksiics
dc.contributor.authorNeugebauer, Petrcs
dc.contributor.authorKalabukhova, Ekatarinacs
dc.contributor.authorSavchenko, Dariyacs
dc.coverage.issue12cs
dc.coverage.volume110cs
dc.date.accessioned2025-06-13T11:56:00Z
dc.date.available2025-06-13T11:56:00Z
dc.date.issued2024-09-09cs
dc.description.abstractThis work focuses on unraveling electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) properties of n-type 6H silicon carbide (SiC) single crystals with high concentrations of uncompensated nitrogen (N) donors, which is essential for fundamental understanding of spin-related phenomena, developing spin-based devices, optimizing materials and devices, and advancing research in quantum information and spintronics. Utilizing low-temperature multifrequency EPR spectroscopy (9.4-395.12 GHz), we identified two intense signals labeled as S line and S1 line in the 6H-SiC crystals with N D - N A approximate to 8 x 1018 and 4 x 1019 cm-3. In addition, in 6H-SiC crystals with N D - N A approximate to 8 x 1018 cm-3, a low-intensity triplet from N donors substituting the quasicubic "k2" nonequivalent position (Nk2) was observed. The S line [g perpendicular to = 2.0029(2), g|| = 2.0038(2)] was assigned to the exchange interaction of conduction electrons and Nk2, while the S1 line [g perpendicular to = 2.0030(2), g|| = 2.0040(2)] is caused by the exchange spin coupling of localized N donors at the "k1" and "k2" positions. The S1 line was observed in high-frequency EDMR spectra of 6H-SiC with N D - N A approximate to 8 x 1018 cm-3, and its emergence was explained by an enhancement of the hopping conductivity due to the EPR-induced temperature increase mechanism. No EDMR spectra were found to occur in the 6H-SiC crystals with N D - N A approximate to 4 x 1019 cm-3, which is close to the critical donor concentration value for a semiconductor-metal transition. Thus it can be concluded that this N donor concentration is too high for the appearance of spin-dependent scattering and too low for the emergence of EPR-induced hopping mechanisms in 6H-SiC.en
dc.formattextcs
dc.format.extent1-8cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationPHYSICAL REVIEW B. 2024, vol. 110, issue 12, p. 1-8.en
dc.identifier.doi10.1103/PhysRevB.110.125205cs
dc.identifier.issn2469-9969cs
dc.identifier.orcid0000-0002-4115-5020cs
dc.identifier.orcid0000-0002-3567-414Xcs
dc.identifier.orcid0000-0001-7095-6401cs
dc.identifier.other197255cs
dc.identifier.researcheridF-2239-2018cs
dc.identifier.researcheridF-4961-2019cs
dc.identifier.researcheridI-7844-2013cs
dc.identifier.urihttps://hdl.handle.net/11012/252350
dc.language.isoencs
dc.publisherAmerican Physical Societycs
dc.relation.ispartofPHYSICAL REVIEW Bcs
dc.relation.urihttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.110.125205cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2469-9969/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectELECTRONen
dc.subjectTRANSPORTen
dc.subjectSILICONen
dc.subjectDONORSen
dc.titleNature of electrically detected magnetic resonance in highly nitrogen-doped 6<i>H</i>-SiC single crystalsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-197255en
sync.item.dbtypeVAVen
sync.item.insts2025.06.13 13:55:59en
sync.item.modts2025.06.13 13:33:05en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Magneto-Optická a THz Spektroskopiecs
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