Polarization anisotropy of the emission from type-II quantum dots

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Date
2015-12-15
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Mark
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American Physical Society
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Abstract
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k - p framework is given. This is verified experimentally by polarization resolved photoluminescence measurements on samples with the type-II confinement. We show that the polarization anisotropy might be utilized to find the vertical position of the hole wave function and its orientation with respect to crystallographic axes of the sample. A proposition for usage in the information technology as a room temperature photonic gate operating at the communication wavelengths as well as a simple model to estimate the energy of fine-structure splitting for type-II GaAsSb capped InAs QDs are given.
V práci studujeme polarizační odezvu emise z GaAsSb kvantových teček typu-II překrytých InAs .
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PHYSICAL REVIEW B. 2015, vol. 92, issue 24, p. 241302-1-241302-5.
https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.241302
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Peer-reviewed
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en
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Creative Commons Attribution 3.0 Unported
http://creativecommons.org/licenses/by/3.0/
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