Efficiency optimization of totem pole PFC with Gallium Nitride semiconductors

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dc.contributor.authorŠír, Michalcs
dc.contributor.authorFeno, Ivancs
dc.coverage.issue6cs
dc.coverage.volume2021cs
dc.date.issued2021-06-01cs
dc.description.abstractNovel Gallium Nitride wide bandgap semiconductor devices are capable of improving efficiency of power converters. This article presents a practical optimisation of GaN converter application in the totem-pole power factor conversion converter. As the bottom side cooled devices are used, the article shows integration of switching device and gate driver on a single insulated metal substrate board, attractive for high power density power supply solutions. Measured efficiency data together with analysis of losses distribution and optimization at specific operating conditions are included. Design files of printed circuit board, created in free tool KiCad, used for evaluated prototype are part of this publication.en
dc.formattextcs
dc.format.extent39-43cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationPrzeglad Elektrotechniczny. 2021, vol. 2021, issue 6, p. 39-43.en
dc.identifier.doi10.15199/48.2021.06.07cs
dc.identifier.issn0033-2097cs
dc.identifier.orcid0000-0001-9487-5489cs
dc.identifier.other170916cs
dc.identifier.urihttp://hdl.handle.net/11012/203016
dc.language.isoencs
dc.publisherWYDAWNICTWO SIGMA-NOTcs
dc.relation.ispartofPrzeglad Elektrotechnicznycs
dc.relation.urihttp://pe.org.pl/abstract_pl.php?nid=12596&lang=1cs
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/0033-2097/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/cs
dc.subjectpower electronicsen
dc.subjectGaNen
dc.subjectGaN totem poleen
dc.subjectGaN efficiency optimizationen
dc.subjectGaN coolingen
dc.subjectGaN on insulated metal substrate IMSen
dc.titleEfficiency optimization of totem pole PFC with Gallium Nitride semiconductorsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-170916en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:42:54en
sync.item.modts2025.01.17 15:22:07en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav výkonové elektrotechniky a elektronikycs
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