Low temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ions

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dc.contributor.authorManiš, Jaroslavcs
dc.contributor.authorMach, Jindřichcs
dc.contributor.authorBartošík, Miroslavcs
dc.contributor.authorŠamořil, Tomášcs
dc.contributor.authorHorák, Michalcs
dc.contributor.authorČalkovský, Vojtěchcs
dc.contributor.authorNezval, Davidcs
dc.contributor.authorKachtík, Lukášcs
dc.contributor.authorKonečný, Martincs
dc.contributor.authorŠikola, Tomášcs
dc.coverage.issue1cs
dc.coverage.volume1cs
dc.date.issued2022-07-15cs
dc.description.abstractAs the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits imposed by quantum mechanics. Thus, two-dimensional (2D) structures appear to be one of the best solutions to meet the ultimate challenges of modern optoelectronic and spintronic applications. The representative of III-V semiconductors, gallium nitride (GaN), is a great candidate for UV and high-power applications at a nanoscale level. We propose a new way of fabrication of 2D GaN on the Si(111) 7 x 7 surface using post-nitridation of Ga droplets by hyperthermal (E = 50 eV) nitrogen ions at low substrate temperatures (T < 220 degrees C). The deposition of Ga droplets and their post-nitridation are carried out using an effusion cell and a special atom/ion beam source developed by our group, respectively. This low-temperature droplet epitaxy (LTDE) approach provides well-defined ultra-high vacuum growth conditions during the whole fabrication process resulting in unique 2D GaN nanostructures. A sharp interface between the GaN nanostructures and the silicon substrate together with a suitable elemental composition of nanostructures was confirmed by TEM. In addition, SEM, X-ray photoelectron spectroscopy (XPS), AFM and Auger microanalysis were successful in enabling a detailed characterization of the fabricated GaN nanostructures.en
dc.formattextcs
dc.format.extent1-8cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationNANOSCALE ADVANCES. 2022, vol. 1, issue 1, p. 1-8.en
dc.identifier.doi10.1039/d2na00175fcs
dc.identifier.issn2516-0230cs
dc.identifier.orcid0000-0001-7482-6655cs
dc.identifier.orcid0000-0003-1896-0715cs
dc.identifier.orcid0000-0003-4706-9112cs
dc.identifier.orcid0000-0003-4658-7655cs
dc.identifier.orcid0000-0001-6503-8294cs
dc.identifier.orcid0000-0002-5665-5861cs
dc.identifier.orcid0000-0001-5821-689Xcs
dc.identifier.orcid0000-0002-5736-9015cs
dc.identifier.orcid0000-0002-3628-3343cs
dc.identifier.orcid0000-0003-4217-2276cs
dc.identifier.other178846cs
dc.identifier.researcheridE-1870-2012cs
dc.identifier.researcheridO-7144-2019cs
dc.identifier.researcheridV-6987-2018cs
dc.identifier.researcheridR-2546-2017cs
dc.identifier.researcheridB-1494-2019cs
dc.identifier.scopus55769747798cs
dc.identifier.scopus57200608539cs
dc.identifier.urihttp://hdl.handle.net/11012/208238
dc.language.isoencs
dc.publisherRoyal Society of Chemistrycs
dc.relation.ispartofNANOSCALE ADVANCEScs
dc.relation.urihttps://pubs.rsc.org/en/content/articlelanding/2022/NA/D2NA00175Fcs
dc.rightsCreative Commons Attribution-NonCommercial 3.0 Unportedcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2516-0230/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/cs
dc.subject2D GaNen
dc.subjectLATTICE PARAMETERSen
dc.titleLow temperature 2D GaN growth on Si(111) 7 x 7 assisted by hyperthermal nitrogen ionsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-178846en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:48:20en
sync.item.modts2025.01.17 15:25:37en
thesis.grantorVysoké učení technické v Brně. Fakulta strojního inženýrství. Ústav fyzikálního inženýrstvícs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Příprava a charakterizace nanostrukturcs
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