Estimating The Power Bjt Excess Charge Recombination Time Constant

but.event.date23.04.2020cs
but.event.titleStudent EEICT 2020cs
dc.contributor.authorMikláš, Ján
dc.date.accessioned2021-07-15T11:17:22Z
dc.date.available2021-07-15T11:17:22Z
dc.date.issued2020cs
dc.description.abstractThe paper demonstrates an experimental way of estimating the excess minority carriers charge stored within the the power bipolar transistor in the saturation mode, i.e. with both junctions forward-biased, as a reference to future IGBT switching action analysis. The method is based on analyzing the transient turn-off base current waveforms at different conditions right before this event. The base current is known to supply the minority carriers within the device. Estimating the recombination time constant serves as a basal precondition for further identification of the excess charge storage depending on various operating conditions and retrospectively an accurate identification of power BJT and IGBT various partial stage of switching action.en
dc.formattextcs
dc.format.extent423-429cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings I of the 26st Conference STUDENT EEICT 2020: General papers. s. 423-429. ISBN 978-80-214-5867-3cs
dc.identifier.isbn978-80-214-5867-3
dc.identifier.urihttp://hdl.handle.net/11012/200609
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings I of the 26st Conference STUDENT EEICT 2020: General papersen
dc.relation.urihttps://conf.feec.vutbr.cz/eeict/EEICT2020cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectpower BJTen
dc.subjectIGBTen
dc.subjectsaturationen
dc.subjectexcess charge storageen
dc.subjectswitching process measurementen
dc.titleEstimating The Power Bjt Excess Charge Recombination Time Constanten
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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