Structural Charachterization Of Aln Thin Films Obtained On Silicon Surface By Pe-Ald

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but.event.date23.04.2020cs
but.event.titleStudent EEICT 2020cs
dc.contributor.authorDallaev, Rashid
dc.date.accessioned2021-07-15T13:12:39Z
dc.date.available2021-07-15T13:12:39Z
dc.date.issued2020cs
dc.description.abstractThe aim of this study is to investigate the hydrogen impregnations in AlN thin films deposited using plasma-enhanced atomic layer deposition technique. As of date, there is an apparent gap in the literature regarding the matter of hydrogen impregnation within the AlN layers. Hydrogen is a frequent contaminant and its content has detrimental effect on the quality of resulted layer, which is why it is relevant to investigate this particular contaminant and try to eliminate or at least minimize its quantity. Within the films hydrogen commonly forms amino or imide types of bonds (–NH2, - NH). There is only a handful of analytical methods enabling the detection of hydrogen. This particular study comprises two of them – Fourier-transform infrared spectroscopy (FTIR) and second ion-mass spectrometry (SIMS). XPS analysis has also been included to examine the surface nature and structural imperfections of the grown layer.en
dc.formattextcs
dc.format.extent197-202cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings II of the 26st Conference STUDENT EEICT 2020: Selected Papers. s. 197-202. ISBN 978-80-214-5868-0cs
dc.identifier.isbn978-80-214-5868-0
dc.identifier.urihttp://hdl.handle.net/11012/200652
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings II of the 26st Conference STUDENT EEICT 2020: Selected papersen
dc.relation.urihttps://conf.feec.vutbr.cz/eeict/EEICT2020cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectatomic layer depositionen
dc.subjectaluminum nitrideen
dc.subjectthin filmsen
dc.subjectfourier-transform infrared spectroscopyen
dc.subjecthydrogen impregnationsen
dc.subjectx-ray photoelectron spectroscopyen
dc.titleStructural Charachterization Of Aln Thin Films Obtained On Silicon Surface By Pe-Alden
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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