Investigation of structure of AlN thin films using Fourier-transform infrared spectroscopy

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dc.contributor.authorDallaev, Rashidcs
dc.contributor.authorPapež, Nikolacs
dc.contributor.authorSobola, Dinaracs
dc.contributor.authorRamazanov, Shihgasancs
dc.contributor.authorSedlák, Petrcs
dc.coverage.issue1cs
dc.coverage.volume23cs
dc.date.issued2020-02-19cs
dc.description.abstractThis study focuses on structural imperfections caused by hydrogen impurities in AlN thin films obtained using atomic layer deposition method (ALD). Currently, there is a severe lack of studies regarding the presence of hydrogen in the bulk of AlN films. Fourier-transform infrared spectroscopy (FTIR) is one of the few methods that allow detection bonds of light elements, in particular - hydrogen. Hydrogen is known to be a frequent contaminant in AlN films grown by ALD method, it may form different bonds with nitrogen, e.g. amino (–NH2) or imide (–NH) groups, which impair the quality of the resulting film. Which is why, it is important to investigate the phenomenon of hydrogen as well as to search for the suitable methods to eliminate or at least reduce its quantity. In this work several samples have been prepared using different precursors, substrates and deposition parameters and characterized using FTIR and additional techniques such as AFM, XPS and EDS to provide a comparative and comprehensive analysis of topography, morphology and chemical composition of AlN thin films.en
dc.formattextcs
dc.format.extent601-606cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationProcedia Structural Integrity. 2020, vol. 23, issue 1, p. 601-606.en
dc.identifier.doi10.1016/j.prostr.2020.01.152cs
dc.identifier.issn2452-3216cs
dc.identifier.orcid0000-0002-6823-5725cs
dc.identifier.orcid0000-0003-2297-2890cs
dc.identifier.orcid0000-0002-0008-5265cs
dc.identifier.orcid0000-0003-2454-7951cs
dc.identifier.other162370cs
dc.identifier.researcheridAAE-8648-2020cs
dc.identifier.researcheridY-9823-2019cs
dc.identifier.researcheridG-1175-2019cs
dc.identifier.researcheridE-2354-2012cs
dc.identifier.scopus57201461813cs
dc.identifier.scopus57195963424cs
dc.identifier.scopus57189064262cs
dc.identifier.scopus57201044717cs
dc.identifier.urihttp://hdl.handle.net/11012/193488
dc.language.isoencs
dc.publisherElseviercs
dc.relation.ispartofProcedia Structural Integritycs
dc.relation.urihttps://www.sciencedirect.com/science/article/pii/S2452321620302195cs
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivatives 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2452-3216/cs
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/cs
dc.subjectthin-filmsen
dc.subjectaluminum nitrideen
dc.subjectFourier-transform infrared spectroscopyen
dc.subjecthydrogen impuritiesen
dc.subjectstructural analysisen
dc.titleInvestigation of structure of AlN thin films using Fourier-transform infrared spectroscopyen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-162370en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:40:24en
sync.item.modts2025.01.17 18:36:03en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav fyzikycs
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