Deposition of MoSe2 flakes using cyclic selenides

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dc.contributor.authorCharvot, Jaroslavcs
dc.contributor.authorZazpe Mendioroz, Raúlcs
dc.contributor.authorKrumpolec, Richardcs
dc.contributor.authorRodriguez Pereira, Jhonatancs
dc.contributor.authorPavliňák, Davidcs
dc.contributor.authorPokorný, Danielcs
dc.contributor.authorKlikar, Milancs
dc.contributor.authorJelínková, Veronikacs
dc.contributor.authorMacák, Jancs
dc.contributor.authorBureš, Filipcs
dc.coverage.issue36cs
dc.coverage.volume11cs
dc.date.accessioned2021-12-14T15:55:54Z
dc.date.available2021-12-14T15:55:54Z
dc.date.issued2021-06-03cs
dc.description.abstractThe currently limited portfolio of volatile organoselenium compounds used for atomic layer deposition (ALD) has been extended by designing and preparing a series of four-, five- and six-membered cyclic silylselenides. Their fundamental properties were tailored by alternating the ring size, the number of embedded Se atoms and the used peripheral alkyl chains. In contrast to former preparations based on formation of sodium or lithium selenides, the newly developed synthetic method utilizes a direct and easy reaction of elemental selenium with chlorosilanes. Novel 2,2,4,4-tetraisopropyl-1,3,2,4-diselenadisiletane, which features good trade-off between chemical/thermal stability and reactivity, has been successfully used for gas-to-solid phase reaction with MoCl5 affording MoSe2. A thorough characterization of the as-deposited 2D MoSe2 flakes revealed its out-of-plane orientation and high purity. Hence, the developed four-membered cyclic silylselenide turned out to be well-suited Se-precursor for ALD of MoSe2.en
dc.formattextcs
dc.format.extent22140-22147cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationRSC Advances. 2021, vol. 11, issue 36, p. 22140-22147.en
dc.identifier.doi10.1039/d0ra10239ccs
dc.identifier.issn2046-2069cs
dc.identifier.other172926cs
dc.identifier.urihttp://hdl.handle.net/11012/203221
dc.language.isoencs
dc.publisherRoyal Society of Chemistrycs
dc.relation.ispartofRSC Advancescs
dc.relation.urihttps://pubs.rsc.org/en/content/articlehtml/2021/ra/d0ra10239ccs
dc.rightsCreative Commons Attribution 3.0 Unportedcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2046-2069/cs
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/cs
dc.subjectatomic layer depositionen
dc.subjectSeen
dc.titleDeposition of MoSe2 flakes using cyclic selenidesen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-172926en
sync.item.dbtypeVAVen
sync.item.insts2021.12.29 12:54:03en
sync.item.modts2021.12.29 12:15:13en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Pokročilé nízkodimenzionální nanomateriálycs
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