Reliability of WBG Transistors

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but.event.date23.04.2024cs
but.event.titleSTUDENT EEICT 2024cs
dc.contributor.authorHorký, Jan
dc.date.accessioned2024-07-09T07:38:40Z
dc.date.available2024-07-09T07:38:40Z
dc.date.issued2024cs
dc.description.abstractSilicon Carbide (SiC) and Gallium Nitride (GaN) transistors have the potential to revolutionize power electronics industry. They have better resistance, size, and efficiency than current Silicon (Si) transistors. On the other hand, as Silicon FET has been used for several decades, its reliability and robustness has been well known and documented. The aim of this paper is to present a review of reliability and radiation issues of GaN and SiC transistors in order to mitigate potential issues in future designs.en
dc.formattextcs
dc.format.extent262-266cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings I of the 30st Conference STUDENT EEICT 2024: General papers. s. 262-266. ISBN 978-80-214-6231-1cs
dc.identifier.isbn978-80-214-6231-1
dc.identifier.issn2788-1334
dc.identifier.urihttps://hdl.handle.net/11012/249248
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings I of the 30st Conference STUDENT EEICT 2024: General papersen
dc.relation.urihttps://www.eeict.cz/eeict_download/archiv/sborniky/EEICT_2024_sbornik_1.pdfcs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectBandgapen
dc.subjectSien
dc.subjectGaNen
dc.subjectSiCen
dc.subjectTransistoren
dc.subjectHEMTen
dc.subjectRadiationen
dc.subjectReliabilityen
dc.subjectRobustnessen
dc.titleReliability of WBG Transistorsen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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