Aluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminum

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dc.contributor.authorDallaev, Rashidcs
dc.contributor.authorSobola, Dinaracs
dc.contributor.authorTofel, Pavelcs
dc.contributor.authorŠkvarenina, Ľubomírcs
dc.contributor.authorSedlák, Petrcs
dc.coverage.issue10cs
dc.coverage.volume10cs
dc.date.issued2020-10-03cs
dc.description.abstractThe aim of this study is motivated by the pursuit to investigate the performance of new and as yet untested precursors such as hydrazinium chloride (N2H5Cl) and triisobutylaluminum Al(C4H9)3 in the AlN atomic layer deposition (ALD) process as well as to study effects of successive annealing on the quality of the resulting layer. Both precursors are significantly cheaper than their conventional counterparts while also being widely available and can boast easy handling. Furthermore, Al(C4H9)3 being a rather large molecule might promote steric hindrance and prevent formation of undesired hydrogen bonds. Chemical analysis is provided by X-ray photoelectron spectroscopy (XPS) and secondary-ion mass spectrometry (SIMS) techniques; surface morphology was studied using atomic force microscopy (AFM). Chlorine containing precursors such as AlCl3 are usually avoided in ALD process due to the risk of chamber contamination. However, experimental data of this study demonstrated that the use of N2H5Cl does not result in chlorine contamination due to the fact that temperature needed for HCl molecules to become reactive cannot be reached within the AlN ALD window (200–350 °C). No amount of chlorine was detected even by the most sensitive techniques such as SIMS, meaning it is fully removed out of the chamber during purge stages. A part of the obtained samples was subjected to annealing (1350 °C) to study effects of high-temperature processing in nitrogen atmosphere, the comparisons with unprocessed samples are provided.en
dc.formattextcs
dc.format.extent1-14cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationCoatings, MDPI. 2020, vol. 10, issue 10, p. 1-14.en
dc.identifier.doi10.3390/coatings10100954cs
dc.identifier.issn2079-6412cs
dc.identifier.orcid0000-0002-6823-5725cs
dc.identifier.orcid0000-0002-0008-5265cs
dc.identifier.orcid0000-0002-4779-7024cs
dc.identifier.orcid0000-0002-9203-0359cs
dc.identifier.orcid0000-0003-2454-7951cs
dc.identifier.other165490cs
dc.identifier.researcheridAAE-8648-2020cs
dc.identifier.researcheridG-1175-2019cs
dc.identifier.researcheridE-2376-2012cs
dc.identifier.researcheridAAC-8505-2019cs
dc.identifier.researcheridE-2354-2012cs
dc.identifier.scopus57201461813cs
dc.identifier.scopus57189064262cs
dc.identifier.scopus57192984953cs
dc.identifier.scopus57201044717cs
dc.identifier.urihttp://hdl.handle.net/11012/195580
dc.language.isoencs
dc.publisherMDPIcs
dc.relation.ispartofCoatings, MDPIcs
dc.relation.urihttps://www.mdpi.com/2079-6412/10/10/954cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2079-6412/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectaluminum nitrideen
dc.subjecttriisobutylaluminumen
dc.subjecthydrazinium chlorideen
dc.subjectatomic layer depositionen
dc.subjectatomic force microscopyen
dc.subjectX-ray photoelectron spectroscopyen
dc.subjectsecondary-ion mass spectrometryen
dc.titleAluminum Nitride Nanofilms by Atomic Layer Deposition Using Alternative Precursors Hydrazinium Chloride and Triisobutylaluminumen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-165490en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:40:24en
sync.item.modts2025.01.17 16:34:54en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav fyzikycs
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