Universal Power Sequencer For Rf Power Amplifiers

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but.event.date23.04.2020cs
but.event.titleStudent EEICT 2020cs
dc.contributor.authorWaldecker, Miroslav
dc.date.accessioned2021-07-15T13:12:39Z
dc.date.available2021-07-15T13:12:39Z
dc.date.issued2020cs
dc.description.abstractMore often used Galium Nitride (GaN) based Radio-Frequency high power transistors in the various RF PA configurations e.g. Doherty is by their nature easily destroyed, great care must be taken, when powering-up and shutting down this circuits. That means, proper power biasing and sequencing is necessary. The Doherty type RF PA with RF drivers four different gate, drain voltages and time when the individual voltages are turned on or off must be controled. Universal power sequencer and biasing device, which meets this requirements is described in this article.en
dc.formattextcs
dc.format.extent126-130cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings II of the 26st Conference STUDENT EEICT 2020: Selected Papers. s. 126-130. ISBN 978-80-214-5868-0cs
dc.identifier.isbn978-80-214-5868-0
dc.identifier.urihttp://hdl.handle.net/11012/200637
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings II of the 26st Conference STUDENT EEICT 2020: Selected papersen
dc.relation.urihttps://conf.feec.vutbr.cz/eeict/EEICT2020cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectGaNen
dc.subjectRF PAen
dc.subjectBiasingen
dc.subjectPower Sequencingen
dc.titleUniversal Power Sequencer For Rf Power Amplifiersen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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