Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

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dc.contributor.authorEl Hammoumi, Mohammedcs
dc.contributor.authorChaudhary, Vivekcs
dc.contributor.authorNeugebauer, Petrcs
dc.contributor.authorEl Fatimy, Abdelouahadcs
dc.coverage.issue47cs
dc.coverage.volume55cs
dc.date.accessioned2023-02-28T07:55:37Z
dc.date.available2023-02-28T07:55:37Z
dc.date.issued2022-11-24cs
dc.description.abstractThe rapidly growing demand for high-performance and low-power electronic and photonic devices has driven attention towards novel two-dimensional (2D) layered materials. In this regard, 2D layered materials, including graphene, molybdenum disulfide (MoS2), and newly discovered phosphorene, have the potential to take over the existing semiconductor industry due to their intriguing features, such as excellent electrical conductivity, strong light-matter interaction, and especially the ability to scale down the resulting device to the atomic level. However, to explore the full potential of these materials in various technological applications, it is essential to develop a large-scale synthesis method that can provide uniform, defect-free thin film. The chemical vapor deposition (CVD) technique has been proven to produce large-scale and less defective 2D crystals with reasonably good quality and uniformity compared to other elaboration techniques, such as molecular beam epitaxy. This article discusses whether CVD may improve 2D layered materials growth, including graphene and MoS2, and whether it can be used to grow phosphorene. Only a few attempts have been made using CVD-like methods to grow phosphorene directly on the substrate. Still, one has to go long to establish a proper CVD method for phosphorene synthesis.en
dc.formattextcs
dc.format.extent18cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationJournal of Physics D - Applied Physics. 2022, vol. 55, issue 47, 18 p.en
dc.identifier.doi10.1088/1361-6463/ac928dcs
dc.identifier.issn1361-6463cs
dc.identifier.other182303cs
dc.identifier.urihttp://hdl.handle.net/11012/209153
dc.language.isoencs
dc.publisherIOP Publishing Ltdcs
dc.relation.ispartofJournal of Physics D - Applied Physicscs
dc.relation.urihttps://iopscience.iop.org/article/10.1088/1361-6463/ac928dcs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1361-6463/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subject2D materialsen
dc.subjectCVDen
dc.subjectgrapheneen
dc.subjectMoS2en
dc.subjectblack phosphorusen
dc.subjectphosphoreneen
dc.titleChemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materialsen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-182303en
sync.item.dbtypeVAVen
sync.item.insts2023.02.28 08:55:37en
sync.item.modts2023.02.28 08:14:56en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Magneto-Optická a THz Spektroskopiecs
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