Characterization Of Aln Thin Films Deposited On Thermally Processed Silicon Substrates Using Pe-Ald

but.event.date25.04.2019cs
but.event.titleStudent EEICT 2019cs
dc.contributor.authorDallaev, Rashid
dc.date.accessioned2020-04-16T07:19:40Z
dc.date.available2020-04-16T07:19:40Z
dc.date.issued2019cs
dc.description.abstractThe aim of this work is to study topography and chemical composition of AlN thin films deposited on Si substrates previously exposed to various time of thermal processing using plasma-enhanced atomic layer deposition technique. The samples were heated up to 500 °C for the period of 2 and 4 hours. Chemical composition of wafers and the films obtained are provided by Xray photoelectron spectroscopy (XPS). Surface topography was investigated using atomic force microscopy (AFM).en
dc.formattextcs
dc.format.extent704-708cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings of the 25st Conference STUDENT EEICT 2019. s. 704-708. ISBN 978-80-214-5735-5cs
dc.identifier.isbn978-80-214-5735-5
dc.identifier.urihttp://hdl.handle.net/11012/186763
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 25st Conference STUDENT EEICT 2019en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectaluminum nitrideen
dc.subjectatomic layer depositionen
dc.subjectatomic force microscopyen
dc.subjectSi single crystal wafersen
dc.subjecttopographyen
dc.subjectx-ray photoelectron spectroscopyen
dc.titleCharacterization Of Aln Thin Films Deposited On Thermally Processed Silicon Substrates Using Pe-Alden
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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