Bismuth, by high-sensitivity low energy ion scattering

Simple item page
dc.contributor.authorVaníčková, Elenacs
dc.contributor.authorPrůša, Stanislavcs
dc.contributor.authorŠikola, Tomášcs
dc.coverage.issue2cs
dc.coverage.volume30cs
dc.date.accessioned2024-02-22T12:46:33Z
dc.date.available2024-02-22T12:46:33Z
dc.date.issued2023-12-01cs
dc.description.abstractLow energy ion scattering is an analytical technique with extreme surface sensitivity. It enables qualitative and quantitative elemental analy-sis of the outermost atomic layer. Straightforward quantification is possible by using well-defined reference samples, as the measured signal is related to known surface atomic concentration. Bi, like Pb, exhibits strong oscillatory behavior of backscattered ion yield when primary ion beam energy is varied. Here, we present the spectra of bismuth obtained by scattering of 4He+ ions in a wide range of energies (0.5-6.0 keV). These should cover a regularly used range of energies for He analysis and serve as standards or reference spectra for analysis of bismuth if the scattering angle is 145 degrees or similar. For this purpose, high-purity foil cleaned by ion sputtering was used. The sensitivity of the instrument in use (high-sensitivity low energy ion scattering spectrometer) is defined by the 3 keV4He+ spectrum of copper. The related atomic sensitivity and relative sensitivity factors are determined.en
dc.formattextcs
dc.format.extent1-15cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationSurface Science Spectra. 2023, vol. 30, issue 2, p. 1-15.en
dc.identifier.doi10.1116/6.0002669cs
dc.identifier.issn1520-8575cs
dc.identifier.orcid0000-0002-3539-7197cs
dc.identifier.orcid0000-0002-0338-3954cs
dc.identifier.orcid0000-0003-4217-2276cs
dc.identifier.other187409cs
dc.identifier.researcheridH-4920-2016cs
dc.identifier.urihttps://hdl.handle.net/11012/245184
dc.language.isoencs
dc.publisherAIP Publishingcs
dc.relation.ispartofSurface Science Spectracs
dc.relation.urihttps://pubs.aip.org/avs/sss/article/30/2/024201/2908438/Bismuth-by-high-sensitivity-low-energy-ioncs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/1520-8575/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectHigh-sensitivity low energy ion scatteringen
dc.subjectHS-LEISen
dc.subjectLEISen
dc.subjectISSen
dc.subjectBien
dc.subjectbismuthen
dc.subjectoscillationsen
dc.titleBismuth, by high-sensitivity low energy ion scatteringen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.grantNumberinfo:eu-repo/grantAgreement/MSM/LM/LM2023051cs
sync.item.dbidVAV-187409en
sync.item.dbtypeVAVen
sync.item.insts2024.02.22 13:46:33en
sync.item.modts2024.02.22 13:14:08en
thesis.grantorVysoké učení technické v Brně. Fakulta strojního inženýrství. Ústav fyzikálního inženýrstvícs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Příprava a charakterizace nanostrukturcs
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
024201_1_6.0002669.pdf
Size:
1.86 MB
Format:
Adobe Portable Document Format
Description:
file 024201_1_6.0002669.pdf
Download
Collections
Ústav fyzikálního inženýrství
Příprava a charakterizace nanostruktur