Raman scattering excitation in monolayers of semiconducting transition metal dichalcogenides

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dc.contributor.authorBartoš, Miroslavcs
dc.contributor.authorZinkiewitz, Malgorzatacs
dc.contributor.authorGrzeszczyk, Magdalenacs
dc.contributor.authorKazimierczuk, Tomaszcs
dc.contributor.authorNogajewski, Karolcs
dc.contributor.authorPacuski, Wojciechcs
dc.contributor.authorWatanabe, Kenjics
dc.contributor.authorTaniguchi, Takashics
dc.contributor.authorWysmołek, Andrzejcs
dc.contributor.authorKossacki, Piotrcs
dc.contributor.authorPotemski, Marekcs
dc.contributor.authorBabinski, Adamcs
dc.contributor.authorMolas, Maciejcs
dc.coverage.issue1cs
dc.coverage.volume8cs
dc.date.issued2024-01-10cs
dc.description.abstractRaman scattering excitation (RSE) is an experimental technique in which the spectrum is made up by sweeping the excitation energy when the detection energy is fixed. We study the low-temperature (T = 5 K) RSE spectra measured on four high quality monolayers (ML) of semiconducting transition metal dichalcogenides (S-TMDs), i.e. MoS2, MoSe2, WS2, and WSe2, encapsulated in hexagonal BN. The outgoing resonant conditions of Raman scattering reveal an extraordinary intensity enhancement of the phonon modes, which results in extremely rich RSE spectra. The obtained spectra are composed not only of Raman-active peaks, i.e. in-plane E ' and out-of-plane A(1)', but the appearance of 1st, 2nd, and higher-order phonon modes is recognized. The intensity profiles of the A(1)' modes in the investigated MLs resemble the emissions due to neutral excitons measured in the corresponding PL spectra for the outgoing type of resonant Raman scattering conditions. Furthermore, for the WSe2 ML, the A(1)' mode was observed when the incoming light was in resonance with the neutral exciton line. The strength of the exciton-phonon coupling (EPC) in S-TMD MLs strongly depends on the type of their ground excitonic state, i.e. bright or dark, resulting in different shapes of the RSE spectra. Our results demonstrate that RSE spectroscopy is a powerful technique for studying EPC in S-TMD MLs.en
dc.formattextcs
dc.format.extent7cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationnpj 2D Materials and Applications. 2024, vol. 8, issue 1, 7 p.en
dc.identifier.doi10.1038/s41699-023-00438-5cs
dc.identifier.issn2397-7132cs
dc.identifier.orcid0000-0002-5923-0260cs
dc.identifier.other188959cs
dc.identifier.researcheridB-3350-2014cs
dc.identifier.urihttp://hdl.handle.net/11012/249398
dc.language.isoencs
dc.publisherNATURE PORTFOLIOcs
dc.relation.ispartofnpj 2D Materials and Applicationscs
dc.relation.urihttps://www.nature.com/articles/s41699-023-00438-5cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2397-7132/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectBULKen
dc.subjectEXCITONSen
dc.subjectWSE2en
dc.titleRaman scattering excitation in monolayers of semiconducting transition metal dichalcogenidesen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.grantNumberinfo:eu-repo/grantAgreement/GA0/GA/GA23-05578Scs
sync.item.dbidVAV-188959en
sync.item.dbtypeVAVen
sync.item.insts2024.12.10 14:55:47en
sync.item.modts2024.12.06 09:31:57en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Magneto-Optická a THz Spektroskopiecs
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