Identification of Power BJT Operating Stages Based on Experimental Excess Charge Estimation

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dc.contributor.authorMikláš, Jáncs
dc.contributor.authorProcházka, Petrcs
dc.date.issued2021-05-12cs
dc.description.abstractThe paper proposes and demonstrates an experimental waz of estimating the amount of stored charge of excess minority carriers within power BJT base and collector. This consequently allows a detailed identification of transistor operating stage. A brief device operation analysis is provided as a clear support of the measured characteristics. The method is based on determining the steadz-state stored charge at various operating conditions by integration of negative transient base current during turn-off event which deflates the stored charge. An ultimate objective of these and future experiments is an accurate interpretation and modelling of various device stages during IGBT switching process. Most of the observed phenomenons are common among a power BJT and IGBT's intrinsic BJT. As IGBT doesn't provide access to the internal base current, it is advantegous to measure and interpret the relations between stored charge and switching waveforms of power BJT first and further generalize the observations to IGBT measurements.en
dc.formattextcs
dc.format.extent615-621cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citation2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC). 2021, p. 615-621.en
dc.identifier.doi10.1109/PEMC48073.2021.9432605cs
dc.identifier.isbn978-1-7281-5660-6cs
dc.identifier.issn2473-0165cs
dc.identifier.orcid0000-0003-3892-2169cs
dc.identifier.orcid0000-0002-6304-6095cs
dc.identifier.other171671cs
dc.identifier.urihttp://hdl.handle.net/11012/203273
dc.language.isoencs
dc.publisherIEEEcs
dc.relation.ispartof2021 IEEE 19th International Power Electronics and Motion Control Conference (PEMC)cs
dc.relation.urihttps://ieeexplore.ieee.org/document/9432605cs
dc.rights(C) IEEEcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2473-0165/cs
dc.subjectIG BTen
dc.subjectPower BJTen
dc.subjectBipolar semiconductor devices saturationen
dc.subjectMinority carriers concentrationen
dc.subjectExcess charge storageen
dc.subjectTransistor switching measurementen
dc.titleIdentification of Power BJT Operating Stages Based on Experimental Excess Charge Estimationen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionacceptedVersionen
sync.item.dbidVAV-171671en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:42:54en
sync.item.modts2025.01.17 16:55:12en
thesis.grantorVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií. Ústav výkonové elektrotechniky a elektronikycs
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