Wet Etching Of Sio2 As Sacrificial Layer With Infinite Selectivity To Al

Brodský, Jan

Wet Etching Of Sio2 As Sacrificial Layer With Infinite Selectivity To Al

but.event.date	23.04.2020	cs
but.event.title	Student EEICT 2020	cs
dc.contributor.author	Brodský, Jan
dc.date.accessioned	2021-07-15T11:17:21Z
dc.date.available	2021-07-15T11:17:21Z
dc.date.issued	2020	cs
dc.description.abstract	This work presents an unusual method for releasing microelectromechanical systems which contain an Al layer. This is done by wet etching of SiO2 as a sacrificial layer. Mixture of 49% HF acid and 20% H2SO4∙SO3 (oleum) is used. Oleum keeps the solution water-free and subsequently prevents the attack of Al layer. Exceptional etch rate (≈ 1 μm·min−1) of thermally grown SiO2 is achieved by this method. The infinite selectivity to Al layer is verified by measuring the thickness of layer before and after etching. The etching itself is done in an ordinary fume hood in polytetrafluorethylene (PTFE) beaker.	en
dc.format	text	cs
dc.format.extent	292-295	cs
dc.format.mimetype	application/pdf	en
dc.identifier.citation	Proceedings I of the 26st Conference STUDENT EEICT 2020: General papers. s. 292-295. ISBN 978-80-214-5867-3	cs
dc.identifier.isbn	978-80-214-5867-3
dc.identifier.uri	http://hdl.handle.net/11012/200582
dc.language.iso	cs	cs
dc.publisher	Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií	cs
dc.relation.ispartof	Proceedings I of the 26st Conference STUDENT EEICT 2020: General papers	en
dc.relation.uri	https://conf.feec.vutbr.cz/eeict/EEICT2020	cs
dc.rights	© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií	cs
dc.rights.access	openAccess	en
dc.subject	MEMS	en
dc.subject	selectivity	en
dc.subject	SiO2 etching	en
dc.subject	sacrificial layer	en
dc.title	Wet Etching Of Sio2 As Sacrificial Layer With Infinite Selectivity To Al	en
dc.type.driver	conferenceObject	en
dc.type.status	Peer-reviewed	en
dc.type.version	publishedVersion	en
eprints.affiliatedInstitution.department	Fakulta elektrotechniky a komunikačních technologií	cs

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