Characteristics Of Gallium Arsenide Solar Cellsat High Temperature

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but.event.date27.04.2017cs
but.event.titleStudent EEICT 2017cs
dc.contributor.authorPapež, Nikola
dc.date.accessioned2020-05-07T09:40:34Z
dc.date.available2020-05-07T09:40:34Z
dc.date.issued2017cs
dc.description.abstractThis article reviews a work on processing of gallium arsenide (GaAs) solar cells. The performance of the cells before and after 300 _x000E_C thermal processing was correlated with topography identified by optical camera, atomic force microscope (AFM) and scanning electron microscope (SEM). Experiment indicates insignificant changes in topography of GaAs solar cells, but electrical characteristics show an excellent resistance of the samples to processing temperature.en
dc.formattextcs
dc.format.extent680-684cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings of the 25st Conference STUDENT EEICT 2019. s. 680-684. ISBN 978-80-214-5735-5cs
dc.identifier.isbn978-80-214-5496-5
dc.identifier.urihttp://hdl.handle.net/11012/187189
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 23st Conference STUDENT EEICT 2017en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectGaAsen
dc.subjectsolar cellsen
dc.subjectprocessingen
dc.subjecttopographyen
dc.subjectSEMen
dc.subjectAFMen
dc.titleCharacteristics Of Gallium Arsenide Solar Cellsat High Temperatureen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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