Understanding the Effect of Electron Irradiation on WS2 Nanotube Devices to Improve Prototyping Routines

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dc.contributor.authorKovařík, Martincs
dc.contributor.authorCitterberg, Danielcs
dc.contributor.authorPaiva de Araújo, Estáciocs
dc.contributor.authorŠikola, Tomášcs
dc.contributor.authorKolíbal, Miroslavcs
dc.coverage.issue12cs
dc.coverage.volume6cs
dc.date.accessioned2025-06-10T11:56:05Z
dc.date.available2025-06-10T11:56:05Z
dc.date.issued2024-12-13cs
dc.description.abstractTo satisfy the needs of the current technological world that demands high performance and efficiency, a deep understanding of the whole fabrication process of electronic devices based on low-dimensional materials is necessary for rapid prototyping of devices. The fabrication processes of such nanoscale devices often include exposure to an electron beam. A field effect transistor (FET) is a core device in current computation technology, and FET configuration is also commonly used for extraction of electronic properties of low-dimensional materials. In this experimental study, we analyze the effect of electron beam exposure on electrical properties of individual WS2 nanotubes in the FET configuration by in-operando transport measurements inside a scanning electron microscope. Upon exposure to the electron beam, we observed a significant change in the resistance of individual substrate-supported nanotubes (by a factor of 2 to 14) that was generally irreversible. The resistance of each nanotube did not return to its original state even after keeping it under ambient conditions for hours to days. Furthermore, we employed Kelvin probe force microscopy to monitor surface potential and identified that substrate charging is the primary cause of changes in nanotubes' resistance. Hence, extra care should be taken when analyzing nanostructures in contact with insulating oxides that are subject to electron exposure during or after fabrication.en
dc.formattextcs
dc.format.extent8776-8782cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationACS Applied Electronic Materials. 2024, vol. 6, issue 12, p. 8776-8782.en
dc.identifier.doi10.1021/acsaelm.4c01450cs
dc.identifier.issn2637-6113cs
dc.identifier.orcid0009-0008-3529-6573cs
dc.identifier.orcid0000-0003-4217-2276cs
dc.identifier.orcid0000-0002-2751-5608cs
dc.identifier.other193856cs
dc.identifier.researcheridD-9301-2012cs
dc.identifier.urihttps://hdl.handle.net/11012/251606
dc.language.isoencs
dc.publisherAMER CHEMICAL SOCcs
dc.relation.ispartofACS Applied Electronic Materialscs
dc.relation.urihttps://pubs.acs.org/doi/10.1021/acsaelm.4c01450cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2637-6113/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectWS2en
dc.subjectnanotubesen
dc.subjectelectrical propertiesen
dc.subjectelectron beam irradiationen
dc.subjectprototypingen
dc.titleUnderstanding the Effect of Electron Irradiation on WS2 Nanotube Devices to Improve Prototyping Routinesen
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-193856en
sync.item.dbtypeVAVen
sync.item.insts2025.06.10 13:56:05en
sync.item.modts2025.06.10 13:33:07en
thesis.grantorVysoké učení technické v Brně. Fakulta strojního inženýrství. Ústav fyzikálního inženýrstvícs
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Příprava a charakterizace nanostrukturcs
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Příprava a charakterizace nanostruktur
Ústav fyzikálního inženýrství