Graphene Field Effect Transistor Properties Modulation Via Mechanical Strain Induced By Micro-Cantilever

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but.event.date27.04.2021cs
but.event.titleSTUDENT EEICT 2021cs
dc.contributor.authorBrodský, Jan
dc.date.accessioned2023-01-06T10:05:42Z
dc.date.available2023-01-06T10:05:42Z
dc.date.issued2021cs
dc.description.abstractThis work presents a new method, which enables the electrical characterization ofgraphene monolayer with induced mechanical strain. The device is a combination oftwo-dimensional field effect transistor (2DFET) and a MEMS cantilever, both of which can be usedto alter graphene properties. The first method applies external electric field to the graphenemonolayer. The second method is based on mechanical bending of the cantilever by external force,which induces mechanical strain in the characterized layer. By sweeping the gate voltage (VGS) inrange from – 50 V to + 50 V and measuring the current between drain and source (IDS) with fixeddrain-source voltage (VDS) at 1 V, Dirac point of graphene is found at ≈ 9.3 V of VGS. After bendingof the cantilever, the sweep is performed again. The induced strain shifts the position of the Diracpoint by ≈ 1.3 V to VGS = 8 V. Because the fabrication process is compatible with silicon technology,this method brings new possibilities in graphene strain engineering.en
dc.formattextcs
dc.format.extent81-84cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings II of the 27st Conference STUDENT EEICT 2021: Selected Papers. s. 81-84. ISBN 978-80-214-5943-4cs
dc.identifier.doi10.13164/eeict.2021.81
dc.identifier.isbn978-80-214-5943-4
dc.identifier.urihttp://hdl.handle.net/11012/200814
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings II of the 27st Conference STUDENT EEICT 2021: Selected papersen
dc.relation.urihttps://conf.feec.vutbr.cz/eeict/index/pages/view/ke_stazenics
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectgrapheneen
dc.subjectDirac pointen
dc.subjectMEMSen
dc.subjectFETen
dc.subjectcantileveren
dc.subjectmechanical strainen
dc.titleGraphene Field Effect Transistor Properties Modulation Via Mechanical Strain Induced By Micro-Cantileveren
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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