Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters
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Date
2022
Authors
Burda, Daniel
Knápek, Alexandr
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Referee
Mark
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Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
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Abstract
This research aims to obtain a more in-depth understanding of the field emission properties of tungsten single-tip field emitters (STFEs) coated with a several tens of nanometer thin barrier of Al2O3. The introduction of an additional barrier into the metal-vacuum interface system of the emitter can be beneficial to improve its performance. The tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barrier coatings were prepared by using low-temperature atomic layer deposition (ALD), a chemical vapor deposition technique. Field emission was studied in an internally developed field emission microscope (FEM) working in UHV vacuum (< 1·10−7 Pa), and the experimental field emission data were analyzed by the so-called Murphy-Good plotsThe value of the local work function of the grown oxide layer were investigated using Ultra-violet photoelectron spectroscopy (UPS).
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Proceedings II of the 28st Conference STUDENT EEICT 2022: Selected papers. s. 248-254. ISBN 978-80-214-6030-0
https://conf.feec.vutbr.cz/eeict/index/pages/view/ke_stazeni
https://conf.feec.vutbr.cz/eeict/index/pages/view/ke_stazeni
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Peer-reviewed
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en
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© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií