Effect Of Al2O3 Barrier On The Field Emission Properties Of Tungsten Single-Tip Field Emitters

Abstract

This research aims to obtain a more in-depth understanding of the field emission properties of tungsten single-tip field emitters (STFEs) coated with a several tens of nanometer thin barrier of Al2O3. The introduction of an additional barrier into the metal-vacuum interface system of the emitter can be beneficial to improve its performance. The tungsten emitters were prepared using a two-step electrochemical drop-off etching technique. Thin oxide barrier coatings were prepared by using low-temperature atomic layer deposition (ALD), a chemical vapor deposition technique. Field emission was studied in an internally developed field emission microscope (FEM) working in UHV vacuum (< 1·10−7 Pa), and the experimental field emission data were analyzed by the so-called Murphy-Good plotsThe value of the local work function of the grown oxide layer were investigated using Ultra-violet photoelectron spectroscopy (UPS).