NAND Flash Memory Organization and Operations

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dc.contributor.authorNovotný, Radovancs
dc.contributor.authorKadlec, Jaroslavcs
dc.contributor.authorKuchta, Radekcs
dc.coverage.issue1cs
dc.coverage.volume5cs
dc.date.issued2015-06-30cs
dc.description.abstractNAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density. NAND flash memory is a non-volatile type of memory and has low power consumption. The erasing of NAND Flash memory is based on a block-wise base. Since cells in a ash chip will fail after a limited number of writes, limited write endurance is a key characteristic of flash memory. There are many noise causes such as read or program disturbs, retention process, charge leakage, trapping generation, etc. Preferably, all errors in the storage would be adjusted by the ECC algorithm. The conclusion of all mentioned parasitic factors creates a set of external and internal influences which affects variable behaviour of memory in time. To prepare a review of all the important factors that affect the reliability and life-cycle endurance of NAND flash memories and was our main motivation for this paper.en
dc.description.abstractNAND flash memories are well known for their uncomplicated structure, low cost, and high capacity. Their typical characteristics include architecture, sequential reading, and high density. NAND flash memory is a non-volatile type of memory and has low power consumption. The erasing of NAND Flash memory is based on a block-wise base. Since cells in a ash chip will fail after a limited number of writes, limited write endurance is a key characteristic of flash memory. There are many noise causes such as read or program disturbs, retention process, charge leakage, trapping generation, etc. Preferably, all errors in the storage would be adjusted by the ECC algorithm. The conclusion of all mentioned parasitic factors creates a set of external and internal influences which affects variable behaviour of memory in time. To prepare a review of all the important factors that affect the reliability and life-cycle endurance of NAND flash memories and was our main motivation for this paper.cs
dc.formattextcs
dc.format.extent1-8cs
dc.format.mimetypeapplication/pdfcs
dc.identifier.citationJournal of Information Technology & Software Engineering. 2015, vol. 5, issue 1, p. 1-8.en
dc.identifier.doi10.4172/2165-7866.1000139cs
dc.identifier.issn2165-7866cs
dc.identifier.orcid0000-0001-9732-5095cs
dc.identifier.orcid0000-0003-2142-194Xcs
dc.identifier.orcid0000-0002-5916-1365cs
dc.identifier.other115782cs
dc.identifier.researcheridD-6867-2012cs
dc.identifier.urihttp://hdl.handle.net/11012/201156
dc.language.isoencs
dc.publisherOmicscs
dc.relation.ispartofJournal of Information Technology & Software Engineeringcs
dc.relation.urihttp://www.omicsgroup.org/journals/nand-flash-memory-organization-and-operations-2165-7866-1000139.php?aid=46500cs
dc.rightsCreative Commons Attribution 4.0 Internationalcs
dc.rights.accessopenAccesscs
dc.rights.sherpahttp://www.sherpa.ac.uk/romeo/issn/2165-7866/cs
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/cs
dc.subjectFlash memoryen
dc.subjectNon-volatileen
dc.subjectBit error rateen
dc.subjectError correction codeen
dc.subjectArchitectureen
dc.subjectReliabilityen
dc.titleNAND Flash Memory Organization and Operationsen
dc.title.alternativeOrganizace a operace paměti NAND Flashcs
dc.type.driverarticleen
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
sync.item.dbidVAV-115782en
sync.item.dbtypeVAVen
sync.item.insts2025.02.03 15:51:32en
sync.item.modts2025.01.17 16:37:39en
thesis.grantorVysoké učení technické v Brně. Středoevropský technologický institut VUT. Středoevropský technologický institut VUTcs
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