Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks

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Sajedin, Maryam
Elfergani, Issa
Rodriguez, Jonathan
Violas, Manuel
Asharaa, Abdalfettah
Abd-Alhameed, Raed
Fernandez-Barciela, Monica
Abdulkhaleq, Ahmed M.

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Mark

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Společnost pro radioelektronické inženýrství

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Abstract

This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6 GHz frequency.

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Radioengineering. 2021 vol. 30, č. 2, s. 372-380. ISSN 1210-2512
https://www.radioeng.cz/fulltexts/2021/21_02_0372_0380.pdf

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Peer-reviewed

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en

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Except where otherwised noted, this item's license is described as Creative Commons Attribution 4.0 International license
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