Optimization of Boron Diffusion for Screen Printed n-PERT Solar Cells

Abstract

In this work we investigate the effect of different boron emitter properties on the cell performance. We fabricated an n-PERT cell concept with front boron emitter and a phosphorous back surface field, with thermal SiO2/SiNx layers on both sides for surface passivation, and a screen printed and fired through metallization of commercial silver paste on both sides. The process was for all wafers the same, with the exception of boron diffusion - boron doping profiles varied in surface concentration, depth and resulting sheet resistance.In this work we investigate the effect of different boron emitter properties on the cell performance. We fabricated an n-PERT cell concept with front boron emitter and a phosphorous back surface field, with thermal SiO2/SiNx layers on both sides for surface passivation, and a screen printed and fired through metallization of commercial silver paste on both sides. The process was for all wafers the same, with the exception of boron diffusion - boron doping profiles varied in surface concentration, depth and resulting sheet resistance.