Dark J–V Characteristics Model Of Chalcopyrite-Based Solar Cells

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but.event.date26.04.2018cs
but.event.titleStudent EEICT 2018cs
dc.contributor.authorŠkvarenina, L’ubomír
dc.date.accessioned2019-03-04T10:05:58Z
dc.date.available2019-03-04T10:05:58Z
dc.date.issued2018cs
dc.description.abstractAn equivalent circuit model of the current parasitic pathways is proposed to describe a behaviour of dark current density–voltage characteristics of chalcopyrite-based solar cells in order to understand a shunting behaviour between the ZnO:Al/i-ZnO/CdS/Cu(In;Ga)Se2/MoSe2/Mo/Ti/TiN layers. The model fitting with a parameter extraction is evaluated for the sample before and after an appearance of a permanent breakdown to prove an accurate response of the proposed model to an ohmic and non-ohmic component shift.en
dc.formattextcs
dc.format.extent528-532cs
dc.format.mimetypeapplication/pdfen
dc.identifier.citationProceedings of the 24th Conference STUDENT EEICT 2018. s. 528-532. ISBN 978-80-214-5614-3cs
dc.identifier.isbn978-80-214-5614-3
dc.identifier.urihttp://hdl.handle.net/11012/138290
dc.language.isoencs
dc.publisherVysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.relation.ispartofProceedings of the 24th Conference STUDENT EEICT 2018en
dc.relation.urihttp://www.feec.vutbr.cz/EEICT/cs
dc.rights© Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologiícs
dc.rights.accessopenAccessen
dc.subjectdark J–V characteristicsen
dc.subjectparasitic current pathwaysen
dc.subjectheterojunctionen
dc.subjectCIGSen
dc.subjectsolar cellen
dc.subjectthin-filmen
dc.subjectequivalent electrical modelen
dc.subjectparameters extractionen
dc.titleDark J–V Characteristics Model Of Chalcopyrite-Based Solar Cellsen
dc.type.driverconferenceObjecten
dc.type.statusPeer-revieweden
dc.type.versionpublishedVersionen
eprints.affiliatedInstitution.departmentFakulta elektrotechniky a komunikačních technologiícs
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